First GISAXS images at G-line! Shown is scattering from a grating
carved into a PMMA film with EUV lithography. Incident angle
was about 0.85 deg, and the lattice was slightly rotated with respect to the
incident beam which gives rise to the asymmetric sacttering pattern.
The grating period of 50 nm can be determined from the bright spots on
the circular arc. (Arthur Woll at G1, sample by Nealey, U Madison)
                                           (more)